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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HD200201 Issued Date : 2001.04.01 Revised Date : 2005.08.16 Page No. : 1/4 HBD437D COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD437D is silison epitaxial-base NPN power transistor in TO-126ML plastic package, intented for use in medium power linear and switching applications. The complementary PNP type is HBD438D. Absolute Maximum Ratings (TA=25C) Symbol VCBO VCES VCEO VEBO IC ICM IB PD Tstg TJ Parametor Collector-Base Voltage (IE=0) Collector-Emitter Voltage (VBE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage (IC=0) Collector Current Collector Peak Current (t10ms) Base Current Total Dissipation at Storage Temperature Max. Operating Junction Temperature TC=25C TA=25C Value 45 45 45 5 4 7 1 20 1.5 -55 to 150 150 TO-126ML Unit V V V V A A A W W C C Thermal Data Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. 5 83 C/W C/W Electrical Characteristics (TA=25C, unless otherwise specified) Symbol ICBO ICES IEBO *VCEO(sus) *VCE(sat) *VBE Parameter Collector Cut-off Current (IE=0) Collector Cut-off Current (VBE=0) Emitter Cut-off Current (IC=0) Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Voltage Test Conditions VCB=45V VCE=45V VEB=5V IC=100mA, IB=0 IC=2A, IB=0.2A IC=10mA,VCE=5V IC=2A, VCE=1V IC=10mA, VCE=5V *hFE *hFE1/hFE2 fT DC Current Gain Matched Pair Transition Frequency IC=0.5A, VCE=1V IC=2A, VCE=1V IC=0.5A, VCE=1V IC=0.25A, VCE=1V Min. 45 30 85 40 3 Typ. 0.4 0.58 130 140 Max. 100 100 1 0.6 1.2 1.4 MHz Unit uA uA mA V V V V *Pulse Test: Pulse Width 380us, Duty Cycle2% HBD437D HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 1000 Spec. No. : HD200201 Issued Date : 2001.04.01 Revised Date : 2005.08.16 Page No. : 2/4 Current Gain & Collector Current 125 C o 75 C o 125 C o 75 C o o 25 C 25 C o hFE 100 hFE hFE @ VCE=1V 100 hFE @ VCE=5V 10 10 1 10 100 1000 10000 1 10 100 1000 10000 Collector Current IC (mA) Collector Current IC (mA) Saturation Voltage & Collector Current 1000 VCE(sat) @ IC=10IB 10000 On Voltage & Collector Current VBE(on) @ VCE=1V Saturation Voltage (mV) 75 C 100 25 C o o On Voltage (mV) 75 C 1000 25 C o o 125 C 10 1 10 100 1000 10000 100 1 10 100 1000 10000 o 125 C o Collector Current IC (mA) Collector Current IC (mA) Safe Operating Area 10 Collector Current-IC (A) 1 0.1 1ms 0.01 1 100ms 1s 10 100 Forward Voltage-VCE (V) HBD437D HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-126ML Dimension A C D E H 437 D Spec. No. : HD200201 Issued Date : 2001.04.01 Revised Date : 2005.08.16 Page No. : 3/4 Marking: L Pb Free Mark Pb-Free: " . " (Note) Normal: None I B 1 F H G M 2 3 Date Code Control Code Note: Green label is used for pb-free packing Pin Style: 1.Emitter 2.Collector 3.Base Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A B C D E F G H I J K L M N Min. 7.74 10.87 0.88 1.28 3.50 2.61 13 1.18 2.88 0.68 3.44 1.88 0.50 Max. 8.24 11.37 1.12 1.52 3.75 3.37 1.42 3.12 0.84 2.30 3.70 2.14 0.51 *: Typical, Unit: mm K J N 3-Lead TO-126ML Plastic Package HSMC Package Code: D Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HBD437D HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HD200201 Issued Date : 2001.04.01 Revised Date : 2005.08.16 Page No. : 4/4 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o o Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245 C 5 C o o Dipping time 5sec 1sec 5sec 1sec 260 C +0/-5 C o o HBD437D HSMC Product Specification |
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